uml1n transistors rev.a 1/3 low-frequency transistor uml1n z features 1) the 2sa1037ak and a diode are housed independently in a umt package. z equivalent circuit tr di (2) (3) (1) (5) (4) z external dimensions (unit : mm) each lead has same dimensions umt5 0.9 0.15 0.1min. 0.7 2.1 1.3 0.65 2.0 0.2 1.25 0.65 ( 4 ) ( 1 ) ( 6 ) ( 2 ) ( 3 ) 1pin mark z packaging specifications fml10 smt5 tr 3000 l10 type packagemarking code basic ordering unit(pieces) z absolute maximum ratings (ta=25 c) tr parameter collector-base voltagecollector-emitter voltage emitter-base voltage collector current collector power dissipatio junction temperature storage temperature symbol v cbo v ceo v ebo i c pc tj tstg limits 60 50 6 0.15 0.15 150 55 to + 150 unit vv v a w c c di tj tstg 150 55 to + 150 c c parameter dc reverse voltagepeak reverse voltage mean rectifying current peak forward voltage surge current junction temperature storage temperature specified i/o frequencies symbol v r v rm i o i fm isurge f limits 8080 0.10.3 4 100 unit vv a a a mhz downloaded from: http:///
uml1n transistors rev.a 2/3 z electrical characteristics (ta=25 c) tr parameter symbol min. typ. max. unit conditions collector-base breakdown voltageemitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio bv cbo bv ebo i cbo i ebo v ce(sat) h fe 60 collector-emitter breakdown voltage bv ceo 50 6 120 0.1 0.1 0.5 560 vv v a a v i c = 1ma i c = 50 a i e = 50 a v cb = 60v v eb = 5v i c /i b = 50ma/ 5ma v ce = 6v, i c = 1ma transition frequency output capacitance f t cob 140 4 5 mhz pf v ce = 12v, i e = 2ma, f = 100mhz v cb = 12v, i e = 0a, f = 1mhz di parameter symbol min. typ. max. unit conditions forward voltagereverse current capacitance between terminals reverse recovery time v f i r c t trr 1.20.1 3.5 4 v a pf ns i f = 100ma v r = 70v v r = 6v, f = 1mhz v r = 6v, i f = 5ma, rl = 50 ? z electrical characteristic curves tr fig.1 grounded emitter propagation characteristics 0.2 collector current : ic ( ma) 50 20 10 5 2 1 0.5 0.2 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ce = 6v base to emitter voltage : v be ( v) ta=100?c 25?c 40?c fig.2 grounded emitter output characteristics ( ) 0.4 4 8 1.2 0 2 6 10 0.8 1.6 2.0 3.5 a 7.0 10.5 14.0 17.5 21.0 24.5 28.0 31.5 i b =0 ta=25?c 35.0 collector current : i c ( ma) collector to mitter voltage : v ce ( v) fig.3 grounded emitter output characteristics ( ? ) 40 80 5 3 4 2 1 20 60 100 0 i b =0 ta=25?c collector current : i c ( ma ) collector to emitter voltage : v ce ( v) 50 a 100 150 200 250 500 450 400 350 300 fig.4 dc current gain vs. collector current ( ) 500200 100 50 0.2 0.5 1 2 5 10 20 50 100 dc current gain : h fe ta=25?c v ce = 5v 3v 1v collector current : i c ( ma) fig.5 dc current gain vs. collector current ( ? ) 500200 100 50 0.2 0.5 1 2 5 10 20 50 100 dc current gain : h fe collector current : i c ( ma) v ce = 6v ta=100?c 40?c 25?c fig.6 collector-emitter saturation voltage vs. collector current ( ) 0.1 0.2 0.5 1 2 5 10 20 50 100 1 0.5 0.2 0.05 ta=25?c collector current : i c ( ma) i c /i b = 50 20 10 collector saturation voltage : v ce(sat) ( v) downloaded from: http:///
uml1n transistors rev.a 3/3 fig.8 gain bandwidth product vs. emitter current 50 100 0.5 20 50 100 200 500 1000 12 510 emitter current : i e ( ma) transition frequency : f t ( mhz) ta=25?c v ce = 12v fig.7 collector-emitter saturation voltage vs. collector current ( ? ) 0.1 0.2 0.5 1 2 5 10 20 50 100 1 0.5 0.2 0.05 collector current : i c ( ma) l c /l b =10 ta=100?c 25?c 40?c collector saturation voltage : v ce(sat) ( v) fig.9 collector output capacitance vs. collector-base voltage emitter inputcapacitance vs. emitter-base voltage collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob ( pf) emitter input capacitance : cib ( pf) 0.5 20 2 5 10 1 2 5 10 20 cib cob ta=25?c f=1mhz i e = 0a i c = 0a di 0 0.1 0.2 0.5 1 2 5 10 20 50 0.2 0.4 0.6 0.8 1.0 1.2 0oc 30oc ta=85oc 50oc25oc 1.4 1.6 forward current : i f ( ma) forward voltage : v f ( v) fig.10 forward characteristics reverse current : i r ( na) reverse voltage : v r ( v) fig.11 reverse characteristics 0.01 100 1000 10 0.1 1 10 20 30 40 80 70 60 50 0 ta = 100 c 75 c 50 c 25 c 25 c 0 c 0 0 42 2 4 6 8 10 12 14 16 n type f=1mhz capacitance between terminals : c t ( pf) reverse voltage : v r ( v) 18 20 fig.12 capacitance between terminals characteristics 0 0 10 98 7 6 5 4 3 2 1 10987654321 n type v r = 6v reverse recovery time : t rr ( ns) forward current : i f ( ma) fig.13 reverse recovery time pulse generator output 50 ? sampling oscilloscope 50 ? 0.01f 100ns input d.u.t. i r 0.1i r t rr output 0 5 ? fig.14 reverse recovery time (t rr ) measurement circuit downloaded from: http:///
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction. downloaded from: http:///
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